Issue 8, 2011
From the journal:

Nanoscale

Sn-induced low-temperature growth of Ge nanowire electrodes with a large lithium storage capacity†

Young-Dae Ko,‡a   Jin-Gu Kang,a   Gwang-Hee Lee,a   Jae-Gwan Park,a   Kyung-Soo Park,b   Yun-Ho Jinb  and  Dong-Wan Kim*b  

* Corresponding authors

a Nano-Photonics Research Center, Korea Institute of Science and Technology, Seoul, Korea

b Department of Materials Science and Engineering, Ajou University, Suwon, Korea
E-mail: dwkim@ajou.ac.kr

Abstract

We herein present the synthesis of germanium (Ge) nanowires on Au-catalyzed low-temperature substrates using a simple thermal Ge/Sn co-evaporation method. Incorporation of a low-melting point metal (Sn) enables the efficient delivery of Ge vapor to the substrate, even at a source temperature below 600 °C. The as-synthesized nanowires were found to be a core/shell heterostructure, exhibiting a uniform single crystalline Ge sheathed within a thin amorphous germanium suboxide (GeOx) layer. Furthermore, these high-density Ge nanowires grown directly on metal current collectors can offer good electrical connection and easy strain relaxation due to huge volume expansion during Li ion insertion/extraction. Therefore, the self-supported Ge nanowire electrodes provided excellent large capacity with little fading upon cycling (a capacity of ∼900 mA h g−1 at 1C rate).

Graphical abstract: Sn-induced low-temperature growth of Ge nanowire electrodes with a large lithium storage capacity

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Article information

DOI
https://doi.org/10.1039/C1NR10471C
Article type
Paper
Submitted
09 May 2011
Accepted
31 May 2011
First published
12 Jul 2011

Nanoscale, 2011,3, 3371-3375

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Sn-induced low-temperature growth of Ge nanowire electrodes with a large lithium storage capacity

Y. Ko, J. Kang, G. Lee, J. Park, K. Park, Y. Jin and D. Kim, Nanoscale, 2011, 3, 3371 DOI: 10.1039/C1NR10471C

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