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Dielectric properties of Ln(Mg1/2Ti1/2)O3 as substrates for high-Tc superconductor thin films

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Abstract

Ln(Mg1/2Ti1/2)O3 (Ln = Dy, La, Nd, Pr, Sm, Y) compositions have been prepared, and their pertinent properties for use as thin film substrates for YBa2Cu3Ox (YBCO) were measured. X-ray diffraction shows that Ln(Mg1/2Ti1/2)O3 compositions have noncubic symmetry and the GdFeO3-type structure. Dielectric constant measurements revealed values between 22 and 27, which are larger than those of the LnAlO3 family. Quality factor (=1/ tan δ) of the ceramic specimens measured at room temperature was larger than 3000 at 10 GHz. Among the compounds, La(Mg1/2Ti1/2)O3 exhibited the highest dielectric constant and the lowest dielectric loss. Chemical reaction was observed between Ln(Mg1/2Ti1/2)O3 (Ln = Dy, Sm, Y) and YBCO after annealing a 1 : 1 mixture at 950 °C. Considering dielectric and physical properties, La(Mg1/2Ti1/2)O3 and Sm(Mg1/2Ti1/2)O3 were determined to be suitable substrates for YBCO thin film used in microwave applications.

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Correspondence to Kug Sun Hong.

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Cho, SY., Kim, CH., Kim, DW. et al. Dielectric properties of Ln(Mg1/2Ti1/2)O3 as substrates for high-Tc superconductor thin films. Journal of Materials Research 14, 2484–2487 (1999). https://doi.org/10.1557/JMR.1999.0333

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  • DOI: https://doi.org/10.1557/JMR.1999.0333

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